Research on the radiation effects and compact model of SiGe HBT 1st ed.

Author

• Sun, Yabin

Additional Author(s)

-

Publisher

Singapore: Springer Nature Singapore Pte Ltd., 2018

Language

English

ISBN

9789811046124

Series

Springer theses, recognizing outstanding Ph.D. research

Subject(s)

• SEMICONDUCTORS
• SOLID STATE PHYSICS

Notes

. .

Abstract

This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.

Physical Dimension

Number of Page(s)

1 online resource (xxiv, 168 p.)

Dimension

-

Other Desc.

ill.

Summary / Review / Table of Content

Introduction --
Ionization damage in SiGe HBT --
Displacement damage with swift heavy ions in SiGe HBT --
Single-event transient induced by pulse laser microbeam in SiGe HBT --
Small-signal equivalent circuit of SiGe HBT based on the distributed effects --
Parameter extraction of SiGe HBT models --
Conclusion.

Exemplar(s)

#	Accession No.	Call Number	Location	Status
1.	01697/20	621.381528 Sun R	Online !	Available